In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As… Click to show full abstract
In this paper, we propose a novel structure of doping-less 1T-DRAM with raised body and Schottky contact to source/drain regions which uses thermionic emission to generate electrons and holes. As the device is free from physical doping, the problems associated with random dopant fluctuations will be eliminated in the proposed doping-less topology. Our simulation results show that a programming window of 28.7
               
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