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A Snapback-Free and Low Turn-Off Loss Reverse-Conducting SOI-LIGBT With Embedded Diode and MOSFET

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A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (MN2) is embedded in the anode side of the LIGBT to… Click to show full abstract

A novel snapback-free and low turn-off loss reverse-conducting (RC) SOI-LIGBT is proposed and investigated by numerical simulations. An n-MOSFET (MN2) is embedded in the anode side of the LIGBT to short the P-anode/N-buffer junction during the turn-off transient, thus allowing the LIGBT to be turned off rapidly without excessive tail current. In addition, MN2 enable the LIGBT to conduct the reverse conducting current like the freewheeling diode. In the forward-conducting state, MN2 is turned off, then the proposed LIGBT operates like a conventional one and the snap-back is avoided. The gate electrode of MN2 can be controlled synchronously by the gate signal of the LIGBT which is level-shifted by a p-i-n diode (D1) and processed by an anode-controlling circuit, and therefore, the proposed RC-LIGBT still maintains a three-terminal configuration. D1 and MN2 are embedded in the drift region and anode-side of the LIGBT, respectively, and they can be isolated by deep-oxide trenches. The numerical simulation results reveal that the turn-off loss ( ${E} _{\mathrm{ off}}$ ) and reverse recovery charge of the proposed LIGBT is reduced by 58.3% and 38.9%, respectively, compared with the conventional LIGBT combining with antiparallel freewheeling diode.

Keywords: reverse conducting; sub sub; sub; turn loss; ligbt

Journal Title: IEEE Journal of the Electron Devices Society
Year Published: 2019

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