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Improved Stability of Amorphous InGaZnO4 Thin-Film Transistors Under Negative Bias Illumination Stress With Split Metal Cover Lines
Negative bias illumination stress (NBIS) instability presents a significant challenge for the application of amorphous $\rm InGaZnO_{4}$ (a-IGZO) thin-film transistors (TFTs) in active-matrix displays. In this article, we demonstrate the… Click to show full abstract
Negative bias illumination stress (NBIS) instability presents a significant challenge for the application of amorphous $\rm InGaZnO_{4}$ (a-IGZO) thin-film transistors (TFTs) in active-matrix displays. In this article, we demonstrate the effectiveness of incorporating split metal lines to enhance the NBIS stability with elevated-metal metal-oxide (EMMO) a-IGZO TFTs. The negative shift in subthreshold current after NBIS is successfully reduced from 3.92 V to 0.54 V when the width of the metal line reaches $2.0~\mu $ m, which is now predominantly caused by negative gate bias induced redistribution of pre-existing ionized oxygen vacancies in the channel a-IGZO. The enhanced NBIS stability is achieved through the illumination shielding effect by the metal lines and passivation of oxygen vacancies under the metal lines by oxygen laterally diffused from the spacing regions between the metal lines. The less degraded a-IGZO regions under the metal lines determined the overall performance of the a-IGZO TFT after NBIS.
