LAUSR

Limited by low availability, high price, and poor switching performance of high-voltage power devices, connecting low-voltage devices in series to block much higher voltages is always an option. However, severe voltage unbalance during turn-off transient remains to be solved. Most of the existing methods designed for low-speed silicon (Si) insulated gate bipolar transistor (IGBT) cannot be directly transplanted to the series-connected silicon carbide (SiC) MOSFETs with high switching speed. To maximum the switching performance of SiC MOSFETs, an elegant implementation of adjusting driving signal time delay method is proposed. In addition, a simplified model during drain–source voltage rising transient is discussed to basically reveal features and problems of the series-connected SiC MOSFETs. The factors affecting the appropriate time delay are discussed as well, especially the influence of the load current. The simplified model and the implementation are both verified by experiments. Indeed, the proposed active voltage balancing control works well and has no penalty of sacrificing switching performance of SiC MOSFETs.