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We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the… Click to show full abstract
We demonstrate monolithic InP-based high-power high-speed waveguide integrated single and balanced modified UTC photodetectors. The single PD chip generates maximum RF output power levels of 8.9 dBm to 5.1 dBm in the frequency range between 60 GHz and 120 GHz. The balanced PD chip has a 3 dB-bandwidth of 80 GHz and generates 2 dBm RF output power at this frequency.
Keywords:
high power;
based waveguide;
waveguide integrated;
power;
inp based;
power inp
Journal Title: Journal of Lightwave Technology
Year Published: 2017
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Journal Title: Journal of Lightwave Technology
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!