LAUSR

Zinc oxide photonic crystal (ZnO PC) formed via facile nanoimprinting was employed on the ZnO electron selective layer of inverted organic photovoltaics (OPV). Optimized inverted OPV fabricated with these highly ordered periodic structures provided effective light trapping, which resulted in increased incident light absorption in the active layer. Consequently, OPVs with the ZnO PC layers show a 23% current density improvement compared with OPVs with planar ZnO layer. Finite-difference time-domain simulation studies show that the electric field intensity is significantly higher in the active layer for devices with ZnO PC structures in comparison with reference devices with planar ZnO electron selective layer. Nanoimprinted ZnO PC is, thus, a viable method for light absorption and efficiency enhancement in OPVs.