LAUSR

We introduce a method for the quantification of perimeter recombination in solar cells based on infrared lifetime measurements. We apply this method at a 25.0%-efficient interdigitated back contact (IBC) silicon solar cell with passivating contacts. The implied pseudo-efficiency determined by infrared lifetime mapping is 26.2% at an intermediate process step. The 1.2%_abs loss is attributed to a process-related reduction in surface passivation quality, recombination in the perimeter area, and series resistance. The 2 × 2 cm² -sized cell is processed on a 100 mm wafer. We determine the implied pseudo-efficiency with illuminated and with shaded perimeter area during infrared lifetime mapping. The difference between both implied pseudo-efficiencies yields the efficiency loss by perimeter recombination, which is determined to be 0.4%_abs for a wafer resistivity of 1.3 Ω cm and even 0.9%_abs for a wafer resistivity of 80 Ω cm.