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We propose a pressure sensor composed of single-gate and dual-gate amorphous-indium–gallium–zinc–oxide thin-film transistors (TFTs) that are integrated with a P(VDF-TrFE)/PZT composite piezo-capacitor. The TFTs are connected in an inverter configuration,… Click to show full abstract
We propose a pressure sensor composed of single-gate and dual-gate amorphous-indium–gallium–zinc–oxide thin-film transistors (TFTs) that are integrated with a P(VDF-TrFE)/PZT composite piezo-capacitor. The TFTs are connected in an inverter configuration, where the piezo-capacitor is connected to the floating top-gate of the dual-gate TFT (driving TFT). When the pressure is applied by finger pressing, the potential of the top-gate changes, and thus, the threshold voltage of the driving TFT shifts, leading to the generation of an output signal that is typically in the range of 200–300 mV.
Journal Title: IEEE Sensors Journal
Year Published: 2017
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