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We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of… Click to show full abstract
We propose a nonlinear device model and a systematic methodology to generate maximum power at any desired harmonic. The proposed power optimization technique is based on the Volterra-Wiener theory of nonlinear systems. By manipulating the device nonlinearity and optimizing the embedding network, optimum conditions for harmonic power generation are provided. Using this theory, a 920–944-GHz frequency quadrupler is designed in a 130-nm SiGe:C process. The circuit achieves the peak output power of −17.3 and −10 dBm of effective isotropic radiated power and consumes 5.7 mW of dc power. To the best of our knowledge, this circuit demonstrates the highest generated power among Si/SiGe-based sources at this frequency range.
Journal Title: IEEE Journal of Solid-State Circuits
Year Published: 2017
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