We present a fully integrated 94-GHz transceiver front-end in a 130-nm/1.1-THz $f_{{{\text {max}}}}$ InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is… Click to show full abstract
We present a fully integrated 94-GHz transceiver front-end in a 130-nm/1.1-THz $f_{{{\text {max}}}}$ InP HBT process. Low power is obtained through low-voltage design and high transistor gain. The IC is designed for multi-function, dual-polarization phased arrays. At 1.5-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 21-dB gain, <9.3-dB noise figure, and consumes 39 mW, while in transmitting mode with time-duplexed vertical and horizontal outputs, the transceiver front-end achieves 5-dBm output power, 22-dB gain, and consumes 40 mW. At 1-V collector bias, in dual-polarization simultaneous receiving mode, the IC has 22.7-dB gain, <8.9-dB noise figure, and consumes 26 mW, while in transmitting mode, it has 22-dB gain and the saturated output power of 1.4 dBm with 29-mW power consumption.
               
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