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A 0.66erms− Temporal-Readout-Noise 3-D-Stacked CMOS Image Sensor With Conditional Correlated Multiple Sampling Technique
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This paper presents a sub-electron temporal readout noise, 8.3 Mpixel and 1.1- $\mu \text{m}$ pixel pitch 3-D-stacked CMOS image sensor (CIS). A conditional correlated multiple sampling (CMS) technique is introduced… Click to show full abstract
This paper presents a sub-electron temporal readout noise, 8.3 Mpixel and 1.1-$\mu \text{m}$ pixel pitch 3-D-stacked CMOS image sensor (CIS). A conditional correlated multiple sampling (CMS) technique is introduced to selectively reduce the dark pixel noise by using a full-range ramp and a small-range ramp. In this way, a sub-electron temporal readout noise CIS is achieved without degrading the frame rate dramatically, compared to the conventional CMS method. A column-parallel single slope ADC with dark pixel detection function is proposed as well. A dynamic-dark-signal-region detection technique is used to mitigate differential nonlinearity (DNL) errors due to ramp slope mismatch. The implemented prototype in 45-nm CIS/65-nm CMOS occupies an area of 35.89 mm2. This paper achieves a 0.66erms− with 5-time sampling at a frame rate of 7.2 frames/s, which corresponds to a sample-rate frequency of 36.1 kHz for the column ADC. The DNL (11 b) is improved from +0.98 LSB/−0.94 LSB to +0.29 LSB/−0.39 LSB by using dynamic dark-signal region technique. The figure of merit of this paper is 2.02 nVrms/Hz.
