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A 28-nm 320-Kb TCAM Macro Using Split-Controlled Single-Load 14T Cell and Triple-Margin Voltage Sense Amplifier

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Ternary content-addressable memory (TCAM) is limited by large cell area, high search power, significant active-mode leakage current, and a tradeoff between search speed and signal margin on the match-line (ML).… Click to show full abstract

Ternary content-addressable memory (TCAM) is limited by large cell area, high search power, significant active-mode leakage current, and a tradeoff between search speed and signal margin on the match-line (ML). In this paper, we developed a split-controlled single-load 14T (SCSL-14T) TCAM cell and a triple-margin voltage sense amplifier (TM-VSA) to achieve the following: 1) compact cell area; 2) lower search delay and search energy; 3) reduced current leakage in standby and active modes; and 4) tolerance for small sensing margin. A testchip with 320-Kb 14T-TCAM macro was fabricated using a 28-nm CMOS logic process and modified compact foundry six-transistor (6T) cell. The proposed macro achieved search delay of only 710 ps and 0.422 fJ/bit/search.

Keywords: margin; tcam; split controlled; cell; single load; controlled single

Journal Title: IEEE Journal of Solid-State Circuits
Year Published: 2019

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