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A 1.8-nW, −73.5-dB PSRR, 0.2-ms Startup Time, CMOS Voltage Reference With Self-Biased Feedback and Capacitively Coupled Schemes
This article presents a nanowatt CMOS voltage reference using self-biased and capacitively coupled schemes for improving the power supply rejection ratio (PSRR) and settling time without power-intensive auxiliary amplifiers and… Click to show full abstract
This article presents a nanowatt CMOS voltage reference using self-biased and capacitively coupled schemes for improving the power supply rejection ratio (PSRR) and settling time without power-intensive auxiliary amplifiers and bias circuits. The chip was fabricated in a 0.18-$\mu \text{m}$ CMOS process. With the proposed schemes, the design can achieve a 1% settling time of 0.2 ms and a −73.5-dB PSRR at 100 Hz while only consuming 1.8 nW. The average temperature coefficient of 15 chips is 62 ppm/°C in a temperature range from −40 °C to 130 °C. The average voltage at 20 °C is 0.26 V, while the standard deviation is 1.1 mV and $3~\sigma $ accuracy is 0.43%.
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