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Capacitive Modulator Design Optimization Using Si and Strained-SiGe for Datacom Applications

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Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by… Click to show full abstract

Silicon photonics has become an industrial reality for datacom applications. Nevertheless, as Si suffers from a low electro-optic effect, commercial modulators are few-mm long. The efficiency can be enhanced by using strained-SiGe or by using a semiconductor insulator semiconductor (SIS) architecture. In this paper, we develop a model based on a perturbative approach to optimize capacitive modulator using full-Si or including a thin layer of strained SiGe. This model is coupled with an optimization algorithm in order to estimate the highest optimal modulation amplitude for different operating frequencies.

Keywords: using strained; strained sige; datacom applications; capacitive modulator

Journal Title: IEEE Journal of Selected Topics in Quantum Electronics
Year Published: 2021

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