A W-band decoupling structure sandwiched between a pair of high-gain step-profiled horn array antennas using the silicon micromachining technology is proposed. To suppress the surface wave, 18 choke slots with… Click to show full abstract
A W-band decoupling structure sandwiched between a pair of high-gain step-profiled horn array antennas using the silicon micromachining technology is proposed. To suppress the surface wave, 18 choke slots with a depth of one quarter wavelength at 94 GHz are arranged in a triangular-grid array and the isolation can be averagely improved by about 7 dB with a range of 2–20 dB. This decoupling structure and two W-band coplanar array antennas are fashioned and fully integrated together by the silicon micromachining technique. Five 400 μm thick and one 650 μm thick silicon wafers are utilized and the total thickness of the antennas is 2.65 mm. Thanks to this technology, light weight, compact size, and high integration of the decoupling structure and array antennas can also be achieved. Additionally, the two array antennas share a common ground plane within a small edge-to-edge spacing of 6.05 mm where TM surface waves exist. Experimental studies validate the performance of the proposed triangular-grid choke slot array.
               
Click one of the above tabs to view related content.