LAUSR

In this letter, for both non-degenerate conduction and degenerate conduction, a new compact model of amorphous oxide semiconductor thin-film transistors is developed. The contributions of the trapped and free charges are considered in the closed-form solutions of surface potential and drain current under a degenerate regime. Furthermore, proof of the model’s accuracy has been obtained by comparisons with numerical results and measured data. The proposed scheme is capable of capturing real-device dc characteristics and of maintaining high computational efficiency, which provides a better platform to develop advanced surface-potential-based model for circuit simulation.