LAUSR

In this letter, a novel super barrier rectifier with an N-enhancement layer (NEL-SBR) is proposed and experimentally demonstrated. Similar to, yet different from, the anti-JFET implantation technology for planar VDMOS, the NEL design equips this new rectifier with enhanced forward conduction ability. As the experimental results show, the proposed NEL-SBR had an improved performance with regard to a lower forward voltage drop and a larger figure of merit than those of the SBR without NEL. For the new NEL-SBR, only one blanket shallow ion implantation step was added to the manufacturing process of the SBR without NEL. The breakdown voltages of the fabricated SBRs with and without NEL were all greater than 50 V. By removing N+ contact, a reduction in the manufacturing process complexity is obtained, and the potential reliability issues from the parasitic N+/P/N structure for the devices presented earlier will not arise for the proposed new SBRs. Therefore, the proposed devices are promising rectifiers that can be used in power electronic applications.