LAUSR

As a first step to develop a diamond integrated circuit, hydrogenated diamond not and nor logic circuits composed of depletion-mode (D-mode) and enhancement-mode (E-mode) metal–oxide–semiconductor field-effect transistors (MOSFETs) are fabricated. The D- and E-modes MOSFETs act as load and driver devices for the logic circuits, respectively, which provides complementary transistor actions. The extrinsic transconductance maxima for both the MOSFETs are almost the same value of 17 mS mm $^{-1}$ and insensitive to device processing. With supply voltage changing from −5 to −25 V, gain maximum for not logic circuit increases from 1.2 to 26.1. The nor logic circuit shows clear nor gate characteristics.