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Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant… Click to show full abstract
Magnetoresistive (MR) sensors made with amorphous In-Ga-Zn-O (a-IGZO) that have significant conventional or inverse MR effects at room temperature were fabricated. A high-temperature a-IGZO MR thin-film transistor exhibited a giant inverse MR effect of up to −69% at 25 mT. The detailed measurement results are reported and the mechanism for generation of the MR effect is discussed.
Keywords:
effect;
magnetoresistive effect;
field sensors;
magnetic field;
effect amorphous;
amorphous magnetic
Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
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Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!