LAUSR

Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) circuits are experimentally demonstrated. This is the first experimental demonstration of 65-nm M3D CMOS-NEM RL circuits satisfying the 1.2-V supply voltage ( ${V}_{\mathsf {DD}}$ ) requirement of the 65-nm technology node. The fabrication process is identical to the conventional 65-nm CMOS baseline process, in which copper NEM memory switches are formed by a dual damascene process.