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For the first time, the influence of fast pulse induced skin effect on the current distribution inside the grounded-gate NMOS (GGNMOS) is reported. The skin effect results in the current… Click to show full abstract
For the first time, the influence of fast pulse induced skin effect on the current distribution inside the grounded-gate NMOS (GGNMOS) is reported. The skin effect results in the current crowding at the finger edges of the GGNMOS, leading to the high photoemission and high substrate potential at those regions. This report comprehensively explains some of the decades-old unexplained physical phenomena.
Keywords:
grounded gate;
effect;
skin effect;
gate nmos;
current distribution;
effect current
Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
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Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!