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The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in… Click to show full abstract
The effects of oxidants both in the channel and contact regions of MoS2 transistors are discussed through a systematic experimental study. This letter highlights the issues of partial instability in metal-organic chemical vapor deposition MoS2 and proposes a procedure, which considerably improves the electrical characteristics of back-gated transistors. By avoiding ambient exposure and layer oxidation, contact resistance can be reduced and intrinsic mobility increased by 50%.
Keywords:
improving mocvd;
performance impact;
exposure;
mocvd mos2;
mos2 electrical;
electrical performance
Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
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Journal Title: IEEE Electron Device Letters
Year Published: 2017
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!