LAUSR

This letter describes a new approach for fabricating quasi-vertical submillimeter-wave GaAs Schottky diodes heterogeneously integrated to high-resistivity silicon substrates. The new method is robust and eliminates previous processing steps that were prone to result in wafer fracture and delamination. Diodes fabricated with the new process and measured in the 325–500 GHz range using on-wafer RF probes exhibits low parasitic capacitance and series resistance, achieving device characteristics comparable to the prior state-of-the-art submillimeter-wave diodes.