We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the conductance in the negative differential… Click to show full abstract
We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors (TFETs) by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire TFETs with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter
               
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