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Universality of short-channel effects on saturation current of MOSFETs has been demonstrated. The modulations of carrier injection and transmission rate have been integrated into universal functions. The proposed form has… Click to show full abstract
Universality of short-channel effects on saturation current of MOSFETs has been demonstrated. The modulations of carrier injection and transmission rate have been integrated into universal functions. The proposed form has been verified by a large set of quantum transport simulations, where relevant ranges of channel thickness, gate length, and scattering mechanisms are covered. As an application, nonlinear current scaling by channel width is presented for ultrascaled devices.
Keywords:
short channel;
ultrascaled mosfet;
channel;
universality short;
effects ultrascaled;
channel effects
Journal Title: IEEE Electron Device Letters
Year Published: 2018
Link to full text (if available)
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Journal Title: IEEE Electron Device Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!