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This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T−1… Click to show full abstract
This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T−1 for wide mT range of the magnetic field. Constant sensitivity of a fabricated sensor can be attributed to device’s 2DEG nature, i.e., its high electron concentration and mobility, and very small layer thickness.
Keywords:
gan magnetic;
dual drain;
drain gan;
magnetic sensor;
sensor;
device
Journal Title: IEEE Electron Device Letters
Year Published: 2018
Link to full text (if available)
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Journal Title: IEEE Electron Device Letters
Year Published: 2018
Link to full text (if available)
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recommendations!