LAUSR

Resistively enhanced magnetic tunnel junction (Re-MTJ) nonvolatile memory devices with a heterogeneous structure of an MTJ surrounded by resistive filaments were investigated for the first time for multi-level cell memory applications. By independent control of the MTJ and the conductive filaments, multi-state resistances can be obtained since both resistive and magnetic switching can be accomplished in a single element. Compared with the conventional MTJs, the Re-MTJ devices have more resistance states without increasing the dimension. The advanced logic-in-memory applications can also be enabled by using conductive filaments and MTJs for logic and storage, respectively. A direct proof of concept was demonstrated by the experimental realization of memory encryption function using Re-MTJ devices with transparent feature.