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Random telegraph noise has been experimentally characterized in two sets of nMOSFET devices under the influence of perpendicular magnetic fields at room temperature. The experimental measurements were performed following a… Click to show full abstract
Random telegraph noise has been experimentally characterized in two sets of nMOSFET devices under the influence of perpendicular magnetic fields at room temperature. The experimental measurements were performed following a systematic trapping phenomena characterization protocol. The results reveal that the drain-source current exhibits an unexpected random telegraph noise trace suggesting variations in the trapping/detrapping mechanisms depending on the magnitude and direction of the magnetic field. The anomaly reported in this letter highlights the need to reevaluate our understanding of the transistor response under weak magnetic fields at room temperature.
Journal Title: IEEE Electron Device Letters
Year Published: 2018
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