LAUSR

Random telegraph noise (RTN) read instability of high-resistance state (HRS) in hafnium–based resistive random access memory (RRAM) is investigated using megabit array statistical analytics. It is found that the RTN read current fluctuation decreases along with the resistance of HRS; this is attributed to the small quantity of perturbation sources in tunnel gap between the conductive filament and the bottom electrode. Our experiment shows that maximum current fluctuation for the HRS tail bit of the megabit array is less than $1~\mu \text{A}$ during 10⁶ successive read operations, and should eliminate the potential RTN-related obstacles for embedded RRAM technology development.