LAUSR

Transparent polycrystalline p-channel copper bromide (CuBr) thin-film transistors (TFTs) are fabricated using a simple one-step spin coating at room temperature. Optimized CuBr TFTs operate in depletion mode with an on-voltage of 35 V and exhibit a hole mobility of 0.15 cm $^{2}\,\,\text{V}^{-1}\,\,\text{s}^{-1}$ , high ON/OFF current ratio ${\sim }10^{4}$ and cycling bias sweep/air stabilities. The performance is superior to that of most solution-processed p-type oxide TFTs, highlighting CuBr as a promising p-type candidate for next-generation printable transparent electronics.