LAUSR

We investigated the impact of high-pressure annealing (HPA) on the memory properties of one-transistor dynamic random-access memory (1TDRAM) using a coupled geometry of a metal-ferroelectric (Hf0.5Zr0.5O2)-metal (MFM) capacitor connected in series with a gate insulator (SiO2) of a metal-oxide semiconductor field-effect transistor. The MFM capacitors were fabricated under different HPA conditions followed by the measurement of ferroelectric characteristics. The obtained results (polarization-electric field curves) were used for extracting the Landau–Khalatnikov coefficients, and these were used with the help of using Sentaurus TCAD tool, to theoretically study various characteristics of the coupled system (1TDRAM), such as sub-threshold swing (SS), memory window (MW), and ON/OFF current ratio ( $\text{I}_{{ \mathrm{\scriptscriptstyle ON}}}/\text{I}_{{ \mathrm{\scriptscriptstyle OFF}}})$ . The output reflected that the MFM associated with 550°C HPA provides a wide MW (1.8–2.4 V based on area ratio), and the lowest SS (33mV/decade). Thus, the optimized HPA condition is promising in providing better results for various memory-based applications.