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Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is… Click to show full abstract
Schottky diodes and metal-semiconductor field-effect transistors (MESFETs) are fabricated on a quite smooth and high boron doping level diamond epitaxial layer. Forward current density maximum for the Schottky diode is 0.6 A cm−2 with the on/off ratio higher than 108. Ideality factor and barrier height for Pt metal on the boron-doped diamond are evaluated to be 1.07 and 1.38 eV, respectively. Drain current maximum for the MESFET is −0.55mA mm−1, which is nine times higher than that of the previous report. Origin of it is possibly attributed to the good surface quality and high boron concentration for the B-diamond.
Journal Title: IEEE Electron Device Letters
Year Published: 2019
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