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A 30.1 mW / $\mu$ m2 SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node

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This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe ${f} _{\text {T}}$ HBTs. On the one hand the technological modifications performed to improve large signal… Click to show full abstract

This letter deals with the load-pull measurements at 94 GHz of 450 GHz Si/SiGe ${f} _{\text {T}}$ HBTs. On the one hand the technological modifications performed to improve large signal performances are presented and on the other hand, load-pull measurements are presented after having describing the measurement setup. A state-of-the-art 30.1 mW / $\mu \text{m}^{{{2}}}$ Si/SiGe HBT is demonstrated thanks to a layout optimization.

Keywords: tex math; inline formula; sige hbt

Journal Title: IEEE Electron Device Letters
Year Published: 2020

Link to full text (if available)


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