A 1.2 kV rated 4H-SiC SenseFET structure with monolithically integrated sensing resistor is proposed and experimentally demonstrated. The SenseFET was fabricated on a 6-inch SiC wafer using the same fabrication… Click to show full abstract
A 1.2 kV rated 4H-SiC SenseFET structure with monolithically integrated sensing resistor is proposed and experimentally demonstrated. The SenseFET was fabricated on a 6-inch SiC wafer using the same fabrication process as the conventional MOSFET, where Tungsten-Silicided (WSi2) Poly-Si layer was patterned to form the Poly-Si gate and sensing resistor,
               
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