In this letter, a silicon carbide (SiC) thyristor, with an 80- $\mu \text{m}$ thick p-type blocking base, is fabricated and triggered by a 365-nm ultraviolet light-emitting diode (UV LED). In… Click to show full abstract
In this letter, a silicon carbide (SiC) thyristor, with an 80-$\mu \text{m}$ thick p-type blocking base, is fabricated and triggered by a 365-nm ultraviolet light-emitting diode (UV LED). In the fabricated thyristor, a thin double-layer n-base structure is designed to improve the poor hole-injection capacity of p+n emitter junction and reduce the triggering ultraviolet light intensity. The UV-LED-triggered performance of the fabricated light-triggered SiC thyristor (LTT) is tested by a resistive load circuit. The results indicate that the fabricated SiC LTT can be triggered by a UV LED with an intensity of 100 mW/cm2. Also, it is shown that the turn-on delay time (${t}_{\text {d}}$ ) has the highest proportion in the turn-on time (${t}_{\text {on}}$ ) and affects the turn-on performance of the SiC LTT most significantly.
