LAUSR

A heterojunction diode between n-type amorphous indium-gallium-zinc-oxide (a-IGZO) and p-type nickel oxide is experimentally demonstrated with self-aligned junction termination. The diode has an abrupt, non-destructive breakdown behavior, and the avalanche breakdown is confirmed by the positive temperature coefficient of the breakdown voltage. The room-temperature breakdown voltage of the device is 33 V, and the extracted critical breakdown electrical field ( ${E}_{CR}$ ) is 2.7 MV/cm. The ${E}_{CR}$ is one order of magnitude higher than that of single-crystal silicon, making a-IGZO promising for power electronics and other high-voltage applications.