LAUSR

Sub-micrometer thin-film transistors (TFTs) are realized using multi-level imprint lithography. Amorphous indium gallium zinc oxide ( $\alpha $ -IGZO) TFTs with channel lengths as small as $0.7~\mu \text{m}$ , field-effect mobility of 10 cm²V⁻¹s⁻¹ and on/off ratio of circa 10⁷ were integrated into a 1000-pixels per inch (ppi) TFT backplane array. The reduction of the number of patterning steps and the inherent self-registration of the most critical transistor layers on top of each other offer a cost-effective high-throughput fabrication route for high-resolution TFT arrays.