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Channel Conductance Modulation of Dual-Gate Charge-Trap Oxide Synapse TFT Using In-Ga-Zn-O Channel and ZnO Trap Layers

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Synaptic operations of all-oxide based charge-trap oxide synapse TFTs using dual-gate configuration (DG CTOx-STFTs) were demonstrated. Short-term plasticity of biological synapses were successfully mimicked by paired-pulse facilitation. Furthermore, by adopting… Click to show full abstract

Synaptic operations of all-oxide based charge-trap oxide synapse TFTs using dual-gate configuration (DG CTOx-STFTs) were demonstrated. Short-term plasticity of biological synapses were successfully mimicked by paired-pulse facilitation. Furthermore, by adopting an incremental step potentiation pulse scheme, the amount of detrapped charge could be calculated from the gradually modulated channel conductance. The multi-valued assigned states exhibit stable long-term plasticity characteristics. The introduction of DG configuration was found to be a good solution to effectively control the CTOx-STFTs.

Keywords: charge trap; trap; oxide synapse; trap oxide; charge; dual gate

Journal Title: IEEE Electron Device Letters
Year Published: 2020

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