LAUSR

In this work, we demonstrate highly scaled, non-volatile memory transistors with ferroelectric Zr-doped HfO₂(HZO) as gate insulator. ${\Omega }$ -gate transistors with gate length ~30 nm and width ~85 nm were fabricated on ~20 nm thick SOI. We demonstrate robust memory operation with ≤100 ns program and erase speed at ±5 V, projected memory retention time up to 10 years at 85 °C, and ~0.5 V memory window after 10⁸ endurance cycles. The impact of ${V} _{\text {D}}$ on erase speed provides insights into the importance of holes on memory operation.