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We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in state-of-the-art monocrystalline Si MOSFETs. This unexpected result is explained via device simulation in terms of… Click to show full abstract
We show that a Meyer-Neldel (MN) regime, usually reported for disordered materials, is found in state-of-the-art monocrystalline Si MOSFETs. This unexpected result is explained via device simulation in terms of the self-consistency between the mobile charge and the device electrostatics. The dependence on device parameters is then discussed, showing that neglecting this effect can lead to interpretation errors for data evaluated at low activation energies.
Keywords:
neldel rule;
rule mosfets;
meyer;
investigation meyer;
meyer neldel;
device
Journal Title: IEEE Electron Device Letters
Year Published: 2020
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Journal Title: IEEE Electron Device Letters
Year Published: 2020
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!