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The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area,… Click to show full abstract
The tri-gate MOSFET is a vertical power transistor with multiple sub-micron FinFET channels. The FinFET structure increases the current-carrying width of the MOS inversion layer without increasing the device area, thereby reducing the specific channel resistance. This is especially useful in silicon carbide where the inversion layer mobility is ~10× lower than in silicon. This innovation can reduce the on-resistance of SiC power MOSFETs at blocking voltages below 1,000 V where over 68% of the applications lie.
Journal Title: IEEE Electron Device Letters
Year Published: 2020
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