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To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness… Click to show full abstract
To satisfy the demand of high-speed and low-power non-volatile memory in the field of integrated circuits for in-memory computing, HfO2-based ferroelectric tunnel junctions have been development with different film thickness and bottom electrodes. In this study, we investigated the influence of bottom electrode on the ferroelectric characteristics of HfO2-based devices by the first-principles calculations and experimental results. First-principles analysis verified that the device with GaAs bottom electrode showed robust ferroelectric properties with remanent polarization of about $20 \mu \text{C}$ /cm2 due to high O-phase proportion. Meanwhile, the samples with GaAs and Pt bottom electrode display excellent retention properties owing to the high system energy. These results pave the way the development of HfO2-base ferroelectric tunnel junctions.
Journal Title: IEEE Electron Device Letters
Year Published: 2023
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