Herein, In2O3/Al2O3/Y6 transistors exhibiting bidirectional photoresponse (BPR) characteristic were fabricated. By utilizing this feature, XOR optoelectronic logic gate was successfully designed and applied in near-infrared (NIR) image encryption. Furthermore, an… Click to show full abstract
Herein, In2O3/Al2O3/Y6 transistors exhibiting bidirectional photoresponse (BPR) characteristic were fabricated. By utilizing this feature, XOR optoelectronic logic gate was successfully designed and applied in near-infrared (NIR) image encryption. Furthermore, an identity verification was proposed by binary encoding the current from different NIR and ultraviolet (UV) illumination combinations. Finally, a photoelectric watermark scheme responsive to UV light was proposed leveraging NIR’s non-volatile programming. The integration of a secure sensor strategy that encompasses image encryption, identity verification, and photoelectric watermark addresses the need for enhanced data protection and offering a comprehensive security solution for the Internet of Things (IoT).
Journal Title: IEEE Electron Device Letters
Year Published: 2024
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