LAUSR

We propose a multibit-per-cell architecture for spin-orbit torque magnetic random access memory (MBC SOT-MRAM) for high-density memory applications. By employing two diode-based magnetic tunnel junctions with a shared common heavy metal electrode, our architecture requires only one transistor to access two bits. This leads to at least double the density compared to existing MRAM designs. Based on the high-density MRAM process design rules, a two-bit cell area of 8 F2 may be realized, which may result in an effective one-bit area of 4 F2. In addition, our design attains similar energy consumption compared to conventional SOT-MRAM.