Their inherent stochasticity makes nanoscale devices prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic behavior. Recently, superparamagnetic… Click to show full abstract
Their inherent stochasticity makes nanoscale devices prospective candidates for low-power computations. Such devices have been demonstrated to exhibit probabilistic switching between two stable states to achieve stochastic behavior. Recently, superparamagnetic nanomagnets (having low-energy barrier $E_B \approx 1\,kT$) have shown promise of achieving stochastic switching at gigahertz rates, with very low currents. On the other hand, voltage-controlled switching of nanomagnets through the magneto-electric effect has shown further improvements in energy efficiency. In this letter, we model a voltage-controlled spintronic device based on superparamagnetic nanomagnets exhibiting telegraphic switching characteristics and analyze its behavior under the influence of external bias. Subsequently, we show that the device leverages the voltage-controlled stochasticity in performing low-voltage 8 bit analog-to-digital conversions. This eliminates the need for comparators, unlike the CMOS-based Flash analog-to-digital converters (ADCs). This device allows for a simple and compact design of low-power approximate ADCs, which have become quintessential elements with the recent developments in neuromorphic computing and “Internet of Things.”
               
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