This letter presents the implementation of RF MEMS-based phase shifter with high power handling capabilities (measured IP3 >63 dBm), high phase, and amplitude linearity (measured rms deviation Click to show full abstract
This letter presents the implementation of RF MEMS-based phase shifter with high power handling capabilities (measured IP3 >63 dBm), high phase, and amplitude linearity (measured rms deviation <±1.56° and ±0.16 dB) for cellular applications. Two phase shifter circuits are designed and tested with steps of ±3° and ±17.5° at 900 MHz to efficiently perform an electronic beam tilt for an eight-element array with more than 0.9° accuracy and up to 10° tilt can be obtained. The measured insertion and return loss for the largest phase state are 1.3 and 13 dB, respectively. For experimental validation, a 3
               
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