In this letter, a generic method is presented for multioctave power amplifier (PA) based on extended version of the continuous class-F. The theory allows resistive second-harmonic impedance and sacrifices part… Click to show full abstract
In this letter, a generic method is presented for multioctave power amplifier (PA) based on extended version of the continuous class-F. The theory allows resistive second-harmonic impedance and sacrifices part of efficiency to get a bandwidth over one octave. A high-voltage GaN HEMT is adopted to achieve high output power and drain efficiency. Finally, a 0.2–2.5 GHz miniature multioctave PA is designed and fabricated. Experimental results show the drain efficiency of 55.5%–70.3% and the output power of 43.7–46.9 dBm across 0.2–2.5 GHz (170%). The compact size of the proposed PA can also be observed with only 2.6 cm
               
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