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Design and Analysis of CMOS T/R Switches With the Impedance Transformation Technique

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We present a 1.9-GHz high-power-handling complementary metal–oxide–semiconductor (CMOS) transmit/ receive (T/R) switch with the impedance transformation technique (ITT). The losses of the T/R switch, including matching networks, are analyzed, and… Click to show full abstract

We present a 1.9-GHz high-power-handling complementary metal–oxide–semiconductor (CMOS) transmit/ receive (T/R) switch with the impedance transformation technique (ITT). The losses of the T/R switch, including matching networks, are analyzed, and the design method for the selection of an optimal switch operating impedance ( $R_{\mathrm {SW}})$ is presented. The proposed T/R switch is implemented in a standard 0.18- $\mu \text{m}$ CMOS process. Experimental data show that the proposed design achieves more than 2 W of power-handling capability.

Keywords: transformation technique; cmos; impedance; tex math; impedance transformation; inline formula

Journal Title: IEEE Microwave and Wireless Components Letters
Year Published: 2017

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