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We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and back-gate charges as well as the respective mobilities… Click to show full abstract
We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and back-gate charges as well as the respective mobilities for the development of analytical expression. The model is implemented in Verilog-A and validated with experimentally calibrated TCAD simulations. The model predicts the high-frequency behavior with good accuracy while capturing the back-bias dependence.
Keywords:
thermal noise;
induced gate;
gate thermal;
model;
back bias
Journal Title: IEEE Microwave and Wireless Components Letters
Year Published: 2018
Link to full text (if available)
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Journal Title: IEEE Microwave and Wireless Components Letters
Year Published: 2018
Link to full text (if available)
Share on Social Media: Sign Up to like & get
recommendations!