LAUSR.org creates dashboard-style pages of related content for over 1.5 million academic articles. Sign Up to like articles & get recommendations!

On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Photo by deklerph from unsplash

The objective of this letter oriented toward micro-wave measurement of high-impedance devices using a conventional on-wafer probe station is multiple. First, we provided a quantification of the measurement uncertainty inherent… Click to show full abstract

The objective of this letter oriented toward micro-wave measurement of high-impedance devices using a conventional on-wafer probe station is multiple. First, we provided a quantification of the measurement uncertainty inherent to the setup when measuring capacitors in the range of 0.01–10 fF using both the reflection and transmission methods up to 50 GHz. In particular, we demonstrate a clear improvement when using the transmission method in series-through configuration. As a practical demonstration, on-wafer MOS voltage-tunable capacitors with capacitances ranging from 0.85 to 1.15 fF are extracted with uncertainties of 130 and 2 aF, respectively, for both reflection and transmission measurements at 10 GHz. Capacitance fluctuation related to the technological process on the order of 20 aF is then exemplary demonstrated using the series-through configuration.

Keywords: voltage tunable; mos voltage; series; measurement; tunable capacitors

Journal Title: IEEE Microwave and Wireless Components Letters
Year Published: 2018

Link to full text (if available)


Share on Social Media:                               Sign Up to like & get
recommendations!

Related content

More Information              News              Social Media              Video              Recommended



                Click one of the above tabs to view related content.